3sk41 — Datasheet

In single-gate models, the capacitance between the gate and drain is high (around 5pF), which can cause instability at high frequencies. The dual-gate structure reduces this "Miller Effect," allowing for much higher gain at 100MHz and above.

Unlike single-gate MOSFETs, the dual-gate structure allows for a second gate ( G2cap G sub 2 3sk41 datasheet

) allows separate bias control. Users can feed a DC control voltage into G2cap G sub 2 to smoothly scale the transconductance ( gfsg sub f s end-sub In single-gate models, the capacitance between the gate